Impedance spectroscopy study of RuO2/SrTiO3 thin film capacitors prepared by radio-frequency magnetron sputtering
| Autor: | Y.K. Vayunandana Reddy, Dieter Mergel, W. Osswald |
|---|---|
| Rok vydání: | 2006 |
| Předmět: |
Materials science
Mechanical Engineering Analytical chemistry Sputter deposition Condensed Matter Physics law.invention Dielectric spectroscopy Capacitor chemistry.chemical_compound Film capacitor chemistry Mechanics of Materials law Sputtering Strontium titanate General Materials Science Grain boundary Thin film |
| Zdroj: | Materials Science and Engineering: B. 130:237-245 |
| ISSN: | 0921-5107 |
| DOI: | 10.1016/j.mseb.2006.03.013 |
| Popis: | Thin film capacitors of SrTiO 3 with RuO 2 top and bottom electrodes on Si substrates were prepared by radio-frequency magnetron sputtering at substrate temperatures 500 and 700 °C and at various oxygen partial pressures. The thickness of the dielectric layer was varied between 200 and 900 nm. The impedance spectra of these samples could be interpreted with an equivalent circuit comprising a resistance and two RC -parallel elements in series. The dielectric permittivity ɛ r of the bulk grains, as extracted from the high-frequency semicircle in the Cole–Cole plot, was in the range 300–600. High oxygen contents lead to high values of ɛ r but also increase the grain boundary resistance. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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