Anomalous disorder-related phenomena in InGaN/GaN multiple quantum well heterosystems
| Autor: | Yeu-Jent Hu, Chia-Hui Fang, Tzer-En Nee, Yu-Fang Chen, Yi-Wen Huang, Jen-Cheng Wang |
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| Rok vydání: | 2010 |
| Předmět: |
Physics::Computational Physics
Electron mobility Photoluminescence Materials science Condensed matter physics business.industry Exciton Biophysics Gallium nitride Heterojunction General Chemistry Condensed Matter Physics Biochemistry Atomic and Molecular Physics and Optics law.invention Condensed Matter::Materials Science chemistry.chemical_compound Tunnel effect chemistry law Optoelectronics Physics::Chemical Physics business Quantum tunnelling Light-emitting diode |
| Zdroj: | Journal of Luminescence. 130:1000-1004 |
| ISSN: | 0022-2313 |
| DOI: | 10.1016/j.jlumin.2010.01.014 |
| Popis: | The influences of InGaN/GaN multiple quantum well (MQW) heterostructures with InGaN/GaN and GaN barriers on carrier confinement were investigated. The degree of disordering over a broad range of temperatures from 20 to 300 K was considered. The optical and electrical properties were strongly influenced by structural and compositional disordering of the InGaN/GaN MQW heterostructures. To compare the degree of disordering we examined the temperature dependence of the luminescence spectra and electrical conductance contingent on the Berthelot-type mechanisms in the InGaN/GaN MQW heterostructures. We further considered carrier transport in the InGaN/GaN disordered systems, probability of carrier tunneling, and activation energy of the transport mechanism for devices with InGaN/GaN and GaN barriers. The optical properties of InGaN/GaN disordered heterosystems can be interpreted from the features of the absorption spectra. The anomalous temperature-dependent characteristics of the disordered InGaN/GaN MQW structures were attributable to the enhancement of the exciton confinement. |
| Databáze: | OpenAIRE |
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