Elaboration of silicon clusters by CVD of silane or laser ablation
| Autor: | F. Salvan, L. Masson, F. Thibaudau, Ph. Dumas, W. Marine, D. Tonneau, R. Pierrisnard, D. Albertini, H. Dallaporta, M. Ramonda |
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| Rok vydání: | 1996 |
| Předmět: |
Sticking coefficient
Materials science Laser ablation Silicon Thermal decomposition Nanocrystalline silicon chemistry.chemical_element Substrate (electronics) Condensed Matter Physics Epitaxy Silane Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry.chemical_compound chemistry Chemical engineering Electrical and Electronic Engineering |
| Zdroj: | Microelectronic Engineering. 30:443-446 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/0167-9317(95)00283-9 |
| Popis: | Silicon clusters have been promoted by thermal decomposition of silane (SiH4) on silicon (111)-(7×7). The adsorption of silane molecule at room temperature has been studied and a mechanism for adsorption is proposed. The sticking coefficient at room temperature was found to be 2.5 10−5. The effect of substrate temperature and gas pressure on the formation of clusters has been investigated to determine the process parameters windows leading to silicon islands formation or epitaxial growth by step flow. Furthermore, silicon clusters have been elaborated by laser ablation. The deposit morphology has been observed by AFM studies. The structures obtained were found to be luminescent in the visible range under UV or visible illumination. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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