Formation of a nanocomposite from plasma enhanced chemical vapour deposition multilayer structures
| Autor: | T. Puzzer, E. Pink, Giuseppe Scardera, D. Bellet, Gavin Conibeer, E. Bellet-Amalric |
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| Rok vydání: | 2008 |
| Předmět: |
Materials science
Nanocomposite Silicon Annealing (metallurgy) Analytical chemistry chemistry.chemical_element Nitride Condensed Matter Physics law.invention Inorganic Chemistry chemistry.chemical_compound chemistry Silicon nitride Plasma-enhanced chemical vapor deposition law Transmission electron microscopy Materials Chemistry Crystallization |
| Zdroj: | Journal of Crystal Growth. 310:3685-3689 |
| ISSN: | 0022-0248 |
| DOI: | 10.1016/j.jcrysgro.2008.05.019 |
| Popis: | This work reports on the crystallization of α - Si 3 N 4 , β - Si 3 N 4 , and silicon in plasma enhanced chemical vapour deposition silicon nitride films grown with SiH 4 and NH 3 at 400 ∘ C and annealed at 1150 ∘ C . Nanometric multilayer structures, composed of alternating layers of silicon nitride and silicon-rich nitride, were used as the starting material. The final product is a thin-film Si – Si 3 N 4 nanocomposite. The formation of this composite is verified using glancing incidence X-ray diffraction, transmission electron microscopy and Fourier transform infra-red spectroscopy. Annealing investigations indicate that the multilayer structure plays a key role in the formation of this composite and for the relatively low temperature formation of α - and β - Si 3 N 4 nanocrystals. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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