Fabrication of light-trapping structure by selective etching of thin Si substrates masked with a Ge dot layer and nanomasks
| Autor: | Yuzo Yamamoto, Kazuhiro Gotoh, A. V. Novikov, D. V. Yurasov, Seimei Akagi, Yasuyoshi Kurokawa, Noritaka Usami, Atsushi Hombe |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Fabrication Materials science Physics and Astronomy (miscellaneous) business.industry General Engineering General Physics and Astronomy 02 engineering and technology Trapping 021001 nanoscience & nanotechnology 01 natural sciences Etching (microfabrication) 0103 physical sciences Optoelectronics 0210 nano-technology business Layer (electronics) |
| Zdroj: | Japanese Journal of Applied Physics. 57:08RF09 |
| ISSN: | 1347-4065 0021-4922 |
| DOI: | 10.7567/jjap.57.08rf09 |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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