2.4 GHz CMOS self‐biased power amplifier with embedded diode lineariser

Autor:	Xiaofei Chen, Zhixiong Ren, Dongsheng Liu, Xuecheng Zou, Kefeng Zhang, Lanqi Liu, Zhenglin Liu
Rok vydání:	2015
Předmět:	Power-added efficiency Materials science business.industry Amplifier Transistor Electrical engineering Linearity law.invention CMOS law Optoelectronics Power semiconductor device Electrical and Electronic Engineering Power MOSFET business Diode
Zdroj:	Electronics Letters. 51:1501-1503
ISSN:	1350-911X 0013-5194
DOI:	10.1049/el.2015.0917
Popis:	A high-linearity CMOS power amplifier (PA) operating at 2.4 GHz with an integrated diode lineariser is presented. A diode-connected N-type MOS transistor is used to increase the V gs of the power transistor as input power increases for linearity improvement. The CMOS PA fabricated in 180 nm CMOS technology achieved 32 dB small signal gain, 30.2 dBm P sat, 28.2 dBm P 1 dB, and a 31.1% peak power added efficiency. By adopting the proposed diode lineariser, the output 1 dB is improved from 24.9 to 28.2 dBm.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::85e9272ae56c4f666e4de6b41720919d https://doi.org/10.1049/el.2015.0917 Zobrazit plný text záznamu Plný text