Overview of microstructural defect development in interfacial regions of HgCdTe and CdTe layers grown on CdTe and alternate substrates

Autor:	R. Ormond, T. J. Magee, C. Leung, H. Kawayoshi, G. R. Woolhouse
Rok vydání:	1985
Předmět:	Crystallography Lattice constant Materials science business.industry Optoelectronics Surfaces and Interfaces Condensed Matter Physics business Microstructure Crystallographic defect Cadmium telluride photovoltaics Surfaces Coatings and Films
Zdroj:	Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 3:83-88
ISSN:	1520-8559 0734-2101
DOI:	10.1116/1.573251
Popis:	The origins of microstructural defects in HgCdTe epilayers grown on CdTe are reviewed. In particular the role played by lattice parameter misfit and interdiffusion in the generation of misfit dislocations is considered. Two approaches to the improvement of epilayers through the use of alternate substrates are described and examples illustrating the potential and current problems in growth of HgCdTe/CdTeSe, HgCdTe/ZnCdTe, and CdTe/GaAs systems are discussed.
Databáze:	OpenAIRE
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