Determination of the total amount of oxygen atoms in silicon oxide surface layers by the nuclear reactions16O(d, p1)17O* and16O(d, α)14N

Autor:	A. Turos, J. Oleński, L. Wieluński
Rok vydání:	1973
Předmět:	Nuclear reaction Silicon Proton Analytical chemistry chemistry.chemical_element Alpha particle Condensed Matter Physics Electronic Optical and Magnetic Materials chemistry Deuterium Yield (chemistry) Silicon oxide Nuclear chemistry Oxygen-16
Zdroj:	Physica Status Solidi (a). 16:211-217
ISSN:	1521-396X 0031-8965
DOI:	10.1002/pssa.2210160122
Popis:	The nuclear reaction 16O(d, p1)17O* is used for the measurement of the total amount of oxygen atoms in thermally grown SiO2 layers on silicon. The method consists in measuring the proton yield from the 16O(d,p1)17O* reaction, induced by a bombardment of the sample with 900 ke V deuterons. The absolute value of the amount of oxygen atoms is obtained by means of the reference standard of Al2O3. The independent method of the thickness determination of SiO2 surface layers by means of the nuclear reaction 16O(d,α)14N is described and its application to the 16O(d,p1)17O* data correction is indicated. A l'aide de la reaction nucleaire 16O(d,p1)17O* on a effectue la measure de la contenance d'oxygene dans les couches SiO2 produits dans le processus d'oxydation thermique de la surface du silicium. La methode consiste a mesurer le rendement de la reaction 16O(d,p1)17O* induite par les deuterons a l'energie de 900 ke V. Le nombre d'atomes d'oxygene a ete trouve par comparaison avec la referance Al2O3. On a decrit aussi la methode independante de la mesure d'epaisseur des couches SiO2 par la reaction 16O(d,α)14N dans la perspective de son application pour l'analyse exacte des resultats obtenus en 16O(d,p1)17O*.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::85ca593d5e01835f20cea0fd6f94c53d https://doi.org/10.1002/pssa.2210160122 Zobrazit plný text záznamu Plný text