Angular dependency on heavy-ion-induced single-event multiple transients (SEMT) in 65 nm twin-well and triple-well CMOS technology
Autor: | Jianjun Chen, Liang Fang, Jizuo Zhang, Shouping Li, Pengcheng Huang |
---|---|
Rok vydání: | 2018 |
Předmět: |
010302 applied physics
Physics Combinational logic Dependency (UML) 010308 nuclear & particles physics Transistor Condensed Matter Physics 01 natural sciences Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention Computational physics Charge sharing Reduction (complexity) CMOS law 0103 physical sciences Electrical and Electronic Engineering Safety Risk Reliability and Quality Event (particle physics) Electronic circuit |
Zdroj: | Microelectronics Reliability. 91:278-282 |
ISSN: | 0026-2714 |
DOI: | 10.1016/j.microrel.2018.10.015 |
Popis: | The extreme reduction in minimum transistor-to-transistor spacing has resulted in multiple transistors being often affected by a single ion strike. The charge sharing becomes a prevalent phenomenon, and it usually brings about single-event multiple transients (SEMT) in combinational logic circuits. In this paper, the angular dependency of heavy-ion-induced SEMT is characterized in heavy-ion experiments. We find that angular heavy-ion incidence can induce single-event five transients in 65 nm bulk CMOS technology. Moreover, the characteristics of SEMT are different in twin-well and triple-well technology. |
Databáze: | OpenAIRE |
Externí odkaz: |