Short-wavelength infrared photodetector with InGaAs/GaAsSb superlattice

Autor: Qingqing Xu, Chuan Jin, Chengzhang Yu, Jianxin Chen
Rok vydání: 2016
Předmět:
Zdroj: Infrared Technology and Applications XLII.
ISSN: 0277-786X
Popis: In this paper, our recent study on InGaAs/GaAsSb Type II photodetector for extended short wavelength infrared detection is reported. The high quality InGaAs/GaAsSb superlattices (SLs) was grown successfully by molecular beam epitaxy. The full width of half maximum of the SLs peak is 39”. Its optical properties were characterized by photoluminescence (PL) at different temperature. The dependences of peak energy on temperature were measured and analyzed. The photodetector with InGaAs/GaAsSb absorption regions has a Quantum Efficiency (QE) product of 12.51% at 2.1um and the 100% cutoff wavelength is at 2.5um, at 300K under zero bias. The dominant mechanism of the dark current is discussed.
Databáze: OpenAIRE