Short-wavelength infrared photodetector with InGaAs/GaAsSb superlattice
Autor: | Qingqing Xu, Chuan Jin, Chengzhang Yu, Jianxin Chen |
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Rok vydání: | 2016 |
Předmět: |
010302 applied physics
Materials science Photoluminescence business.industry Superlattice Photodetector 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Wavelength chemistry.chemical_compound Optics chemistry 0103 physical sciences Optoelectronics Quantum efficiency 0210 nano-technology business Indium gallium arsenide Dark current Molecular beam epitaxy |
Zdroj: | Infrared Technology and Applications XLII. |
ISSN: | 0277-786X |
Popis: | In this paper, our recent study on InGaAs/GaAsSb Type II photodetector for extended short wavelength infrared detection is reported. The high quality InGaAs/GaAsSb superlattices (SLs) was grown successfully by molecular beam epitaxy. The full width of half maximum of the SLs peak is 39”. Its optical properties were characterized by photoluminescence (PL) at different temperature. The dependences of peak energy on temperature were measured and analyzed. The photodetector with InGaAs/GaAsSb absorption regions has a Quantum Efficiency (QE) product of 12.51% at 2.1um and the 100% cutoff wavelength is at 2.5um, at 300K under zero bias. The dominant mechanism of the dark current is discussed. |
Databáze: | OpenAIRE |
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