Femtosecond Laser Annealing of Multilayer Thin-Film Structures Based on Amorphous Germanium and Silicon
| Autor: | S. V. Zabotnov, Pavel K. Kashkarov, Alexey A. Popov, Denis E. Presnov, D. V. Shuleiko, Alexander V. Pavlikov, G. K. Krivyakin, A. V. Kolchin, Leonid A. Golovan, Vladimir A. Volodin |
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| Rok vydání: | 2020 |
| Předmět: |
Amorphous silicon
Materials science Physics and Astronomy (miscellaneous) Silicon Physics::Optics chemistry.chemical_element Germanium 02 engineering and technology Substrate (electronics) 01 natural sciences law.invention Condensed Matter::Materials Science chemistry.chemical_compound symbols.namesake law 0103 physical sciences Thin film 010302 applied physics business.industry technology industry and agriculture equipment and supplies 021001 nanoscience & nanotechnology Laser chemistry Femtosecond symbols Optoelectronics 0210 nano-technology business Raman spectroscopy |
| Zdroj: | Technical Physics Letters. 46:560-563 |
| ISSN: | 1090-6533 1063-7850 |
| DOI: | 10.1134/s1063785020060048 |
| Popis: | The processes of femtosecond laser annealing of thin-film multilayer structures based on amorphous silicon and germanium produced by plasma-chemical deposition on a glass substrate have been studied. The formation of periodic structures on the surface of irradiated films has been detected by the scanning electron microscopy method. Analysis of Raman spectra has shown that amorphous germanium crystallizes and a mixing of germanium and silicon layers depending on the pulse energy density occurs in the absence of amorphous silicon layers crystallization as a result of exposure to femtosecond laser pulses. |
| Databáze: | OpenAIRE |
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