Regrown Vertical GaN p–n Diodes with Low Reverse Leakage Current
| Autor: | Andrew M. Armstrong, Mary H. Crawford, A. A. Allerman, Vincent M. Abate, Karen Charlene Cross, Greg Pickrell, C. E. Glaser |
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| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science business.industry Doping 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics Epitaxy 01 natural sciences Electronic Optical and Magnetic Materials Reverse leakage current 0103 physical sciences Materials Chemistry Optoelectronics Breakdown voltage Wafer Power semiconductor device Electrical and Electronic Engineering 0210 nano-technology business Deposition (law) Diode |
| Zdroj: | Journal of Electronic Materials. 48:3311-3316 |
| ISSN: | 1543-186X 0361-5235 |
| DOI: | 10.1007/s11664-019-07098-6 |
| Popis: | Vertical c-plane GaN p–n diodes, where the p-GaN layer is formed by epitaxial regrowth using metal–organic chemical-vapor deposition, are reported. Current–voltage (I–V) performance similar to continuously grown p–n diodes is demonstrated, including low reverse leakage current and reverse breakdown voltage in excess of −600 V, despite the lack of field management structures to increase the reverse breakdown voltage. Secondary-ion mass spectrometry analysis of regrown interfaces reveals that the primary source of Si at the regrown interface (“Si spike”) is ex situ contamination during wafer handling prior to loading for regrowth. Continuously grown p–n diodes with intentional Si doping at the p–n junction do not show degraded I–V performance for Si sheet concentrations |
| Databáze: | OpenAIRE |
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