850 GHz Receiver and Transmitter Front-Ends Using InP HEMT
| Autor: | Alexis Zamora, Xiaobing Mei, Khanh Nguyen, Ben S. Gorospe, Wayne H. Yoshida, Jose G. Padilla, William R. Deal, Kevin M. K. H. Leong |
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| Rok vydání: | 2017 |
| Předmět: |
Materials science
Heterojunction bipolar transistor 02 engineering and technology Integrated circuit design High-electron-mobility transistor Integrated circuit 01 natural sciences law.invention chemistry.chemical_compound law 0103 physical sciences Hardware_INTEGRATEDCIRCUITS 0202 electrical engineering electronic engineering information engineering Electrical and Electronic Engineering Monolithic microwave integrated circuit 010302 applied physics Radiation business.industry Transmitter Electrical engineering 020206 networking & telecommunications chemistry Logic gate Indium phosphide Optoelectronics business |
| Zdroj: | IEEE Transactions on Terahertz Science and Technology. 7:466-475 |
| ISSN: | 2156-3446 2156-342X |
| Popis: | This paper reports on development of 850 GHz band receiver and transmitter front-ends using a new generation of 25 nm indium phosphide high electron mobility transistor engineered for high maximum frequency of oscillation f MAX and cut-off frequency fT. Integrated circuits in this technology are used for all receiver and transmitter functions, including low noise amplification and power amplification directly at 850 GHz, as well as frequency conversion. This paper provides a detailed summary of process capability, integrated circuit design and packaging, and an overview of the receiver and transmitter front-ends. |
| Databáze: | OpenAIRE |
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