Frequency response of sub-micrometre pseudomorphic AlGaAs/InGaAs/GaAs MODFETs at cryogenic temperatures

Autor:	A.A. Ketterson, James Kolodzey, S. J. Caracci, Ilesanmi Adesida, J. Laskar
Rok vydání:	1990
Předmět:	Frequency response Materials science Ingaas gaas business.industry Transistor Gate length General Physics and Astronomy Electron velocity Cutoff frequency law.invention law Optoelectronics General Materials Science Field-effect transistor Current (fluid) business
Zdroj:	Cryogenics. 30:1134-1139
ISSN:	0011-2275
DOI:	10.1016/0011-2275(90)90221-w
Popis:	This paper reports on the d.c. and high frequency characteristics of pseudomorphic AlGaAs/InGaAs/GaAs MODFETs with gate lengths from 1.73 to 0.35 μm at 300 and 110 K. Significant device improvement is shown at 110 K, with current gain cut-off frequency, F T , increasing by 80% for gate length L g = 1.73 μ m and 15% for L g = 0.35 μ m. The d.c. and high frequency behaviour is analysed and it is shown that electron velocity, not mobility, controls transport in these devices.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::857fdc2fa34c4427333c4b492d10d273 https://doi.org/10.1016/0011-2275(90)90221-w Zobrazit plný text záznamu