Ultrawideband power detector GaAs MMIC's

Autor: Andrey S. Zagorodny, Vladimir A. Gushchin, Igor V. Yunusov, Nikolay N. Voronin
Rok vydání: 2014
Předmět:
Zdroj: 2014 15th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices (EDM).
DOI: 10.1109/edm.2014.6882503
Popis: The results of design and manufacturing of absorbed power detectors MMIC's and directional power detector MMIC with frequency range up to 40 GHz based on zero-bias diodes are presented in this paper. Measured S-parameters show input return loss less than -18 dB. Absorbed power detector have 80 dB dynamic range. Directional power detector have low insertion loss (less than 2 dB), high voltage sensitivity and directivity more than 12 dB. Index Terms – zero-bias diode, gallium arsenide, monolithic microwave integrated circuit, RF power detector.
Databáze: OpenAIRE