MRAM Device Incorporating Single-Layer Switching via Rashba-Induced Spin Torque
| Autor: | Seng Ghee Tan, Jie Guo, Hao Meng, S. Rachid, S. Y. H. Lua, Kwaku Eason, Mansoor B. A. Jalil |
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| Rok vydání: | 2011 |
| Předmět: |
Coupling
Physics Magnetoresistive random-access memory Magnetoresistance Condensed matter physics Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Electronic Optical and Magnetic Materials Non-volatile memory Condensed Matter::Materials Science Magnetization Magnetic anisotropy Electrical and Electronic Engineering Frequency modulation Micromagnetics |
| Zdroj: | IEEE Transactions on Magnetics. 47:3868-3871 |
| ISSN: | 1941-0069 0018-9464 |
| DOI: | 10.1109/tmag.2011.2158634 |
| Popis: | We designed and modeled a nonvolatile memory device that utilizes the Rashba spin-orbit coupling (SOC) to write data onto a free ferromagnetic (FM) layer and uses the tunneling magnetoresistive (TMR) effect for data read-back. The magnetic RAM (MRAM) device consists of a free (switchable) FM multilayer stack, in which a large internal electric field is induced at the interfaces between the oxide and the FM layer. In the FM layer, data writing by magnetization switching occurs via the Rashba-induced spin torque, while the data reading process in the system could be fulfilled via the current-perpendicular-to-plane TMR response. A general equation of motion for the local moments has been obtained by formally deriving the SU(2) spin-orbit gauge field arising due to SOC and the critical current density is estimated to be 1.2 ×108 A/cm2. Micromagnetic simulations were performed to demonstrate the Rashba-induced switching mechanism. By choosing or fabricating alloys with a lower magnetocrystalline anisotropy and enhancing the Rashba coupling strength via surface or interfacial engineering, the critical current may be further reduced to well below 107 A/cm2, a level that may enable the practical realization of a single-layer Rashba-induced magnetization switching memory. |
| Databáze: | OpenAIRE |
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