Helium‐Permselective Amorphous SiC Membrane Modified by Chemical Vapor Infiltration

Autor: Tomohiro Saitoh, Shinji Fujisaki, Yuji Iwamoto, Takayuki Nagano, Koji Sato
Rok vydání: 2007
Předmět:
Zdroj: Soft Materials. 4:109-122
ISSN: 1539-4468
1539-445X
Popis: Helium‐permselective silicon carbide (SiC) membrane was successfully synthesized on an outer surface of γ‐alumina‐coated α‐alumina porous support by both pyrolysis of polycarbosilane without oxygen‐curing process and chemical vapor infiltration (CVI). An amorphous SiC membrane possessed He permeance of 7.7×10−8 mol · m−2 · s−1 · Pa−1, He/CO2 permselectivity of 64, and He/H2 permselectivity of 4.4 at 873 K. CVI process is an effective way to increase permselectivity of gases with small kinetic diameter.
Databáze: OpenAIRE