Band bending effect on the thermal dependence of photoemission from Li activated Si
| Autor: | M. Laguës |
|---|---|
| Rok vydání: | 1974 |
| Předmět: |
Materials science
Yield (engineering) Silicon Inverse photoemission spectroscopy Analytical chemistry chemistry.chemical_element Angle-resolved photoemission spectroscopy Surfaces and Interfaces Atmospheric temperature range Condensed Matter Physics Surfaces Coatings and Films Band bending chemistry Materials Chemistry Lithium Work function |
| Zdroj: | Surface Science. 45:432-440 |
| ISSN: | 0039-6028 |
| DOI: | 10.1016/0039-6028(74)90180-0 |
| Popis: | The photoemissive properties of lithium activated silicon are studied in the temperature range 25°C to 500°C. The Li activation is obtained by surface segregation of bulk dissolved Li. The Li layer seems to be highly stable when Si is heated up to 500°C. On the other hand, the photoemission quantum yield changes with temperature. In order to get complementary information, work function measurements are performed on the same samples. Both photoemission and work function measurements allow us to describe the whole energy picture at the surface of n and p type samples and lead to the conclusion that band bending effect is responsible for the thermal dependence of the yield. |
| Databáze: | OpenAIRE |
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