| Autor: |
Sung-young Lee, In-Hyuk Choi, Dong-Won Kim, Eun Jung Yun, Bork Kyoung Park, Sung Min Kim, Donggun Park, Ji-Myoung Lee, Min Sang Kim |
| Rok vydání: |
2007 |
| Předmět: |
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| Zdroj: |
2007 IEEE International Conference on Integrated Circuit Design and Technology. |
| DOI: |
10.1109/icicdt.2007.4299545 |
| Popis: |
We compared electrical characteristics of TBCFET (Triple-Bridge-Channel MOSFET), MBCFET (Multi-Bridge-Channel MOSFET) and SBCFET (Single-Bridge-Channel MOSFET) with sub-20 nm gates. TBCFET is suitable for low-power application with 2.9 mA/um of on-state current and SNM (static noise margin) of 320 mV even at Vdd = 0.8V MBCFET and SBCFET, that are applicable to high-performance devices, show 4.17 mA/um and 2.16 mA/um of on-state currents at V^ = 1.0 V, respectively. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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