Reliability of silicon nitride dielectric-based metal-insulator-metal capacitors

Autor:	M. Raymond, T. Remmell, E. D. Luckowski, S. Braithwaite, D. Roberts, J. Walls, D. Qualls, Melvy F. Miller, M. Martin, Rampi Ramprasad
Rok vydání:	2004
Předmět:	Materials science business.industry Electrical engineering Extrapolation Electronic packaging Time-dependent gate oxide breakdown Dielectric law.invention Capacitor chemistry.chemical_compound Reliability (semiconductor) Silicon nitride chemistry law Optoelectronics Wafer business
Zdroj:	2004 IEEE International Reliability Physics Symposium. Proceedings.
DOI:	10.1109/relphy.2004.1315395
Popis:	TDDB testing of MIM capacitors with various thickness plasma silicon nitride dielectric yielded high quality lifetime data, with very large Weibull betas and consistency between wafer-scale and package level tests. An excellent fit of the data to the 1/E-model was obtained indicating that the E-model lifetime extrapolation generally adopted would result in very conservative estimates of PEN MIM lifetimes.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::853b75e66fd3293dd3446d4a23d29a13 https://doi.org/10.1109/relphy.2004.1315395 Zobrazit plný text záznamu