A 1.75 - 6 GHz Miniaturized GaAs FET Amplifier Using Quasi-Lumped Element Impedance Matching Networks

Autor:	R.E. Gray, S.B. Moghe, W.C. Tsai
Rok vydání:	2005
Předmět:	High impedance Materials science FET amplifier business.industry Amplifier Distributed amplifier Impedance matching Electrical engineering Optoelectronics Instrumentation amplifier business Noise figure Low-noise amplifier
Zdroj:	MTT-S International Microwave Symposium Digest.
DOI:	10.1109/mwsym.1981.1129910
Popis:	A quasi-lumped element impedance matching technique was developed for a multi-octave bandwidth FET amplifier. The lumped elements were realized by parallel capacitors, high impedance band wires and etched lines on a 0.170 x 0.085 x 0.010 inch alumina substrate. A two-stage amplifier has been constructed using this method and yields 17/spl plusmn/ dB gain and 3.5 dB maximum noise figure over 1.75 to 6.0 GHz band.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::85324b6b663152f16b22b15e790344b9 https://doi.org/10.1109/mwsym.1981.1129910 Zobrazit plný text záznamu