An Over 120 dB Single Exposure Wide Dynamic Range CMOS Image Sensor With Two-Stage Lateral Overflow Integration Capacitor

Autor:	Rihito Kuroda, Yasuyuki Fujihara, Shota Nakayama, Maasa Murata, Shigetoshi Sugawa
Rok vydání:	2021
Předmět:	Materials science Dynamic range Transistor Capacitance Electronic Optical and Magnetic Materials law.invention Capacitor Signal-to-noise ratio (imaging) law Wide dynamic range Electronic engineering Electrical and Electronic Engineering Image sensor Sensitivity (electronics)
Zdroj:	IEEE Transactions on Electron Devices. 68:152-157
ISSN:	1557-9646 0018-9383
Popis:	This article presents a prototype linear response single exposure CMOS image sensor with two-stage lateral overflow integration capacitors (LOFIC) exhibiting over the 120-dB dynamic range (DR) with 11.4 Me− full well capacity (FWC) and maximum signal-to-noise ratio (SNR) of 70 dB. The measured SNR at all switching points were over 35 dB thanks to the proposed two-stage LOFIC.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::85291702cb0997a16acf593c5f4e9b11 https://doi.org/10.1109/ted.2020.3038621 Zobrazit plný text záznamu