Modeling the effect of defects on the performance of an n-CdO/p-Si solar cell
| Autor: | Fahrettin Yakuphanoglu, Slimane Chala, Nouredine Sengouga |
|---|---|
| Rok vydání: | 2015 |
| Předmět: |
Materials science
Silicon business.industry Open-circuit voltage Doping chemistry.chemical_element Heterojunction Condensed Matter Physics Surfaces Coatings and Films law.invention chemistry.chemical_compound Semiconductor chemistry law Solar cell Cadmium oxide Optoelectronics business Instrumentation Short circuit |
| Zdroj: | Vacuum. 120:81-88 |
| ISSN: | 0042-207X |
| DOI: | 10.1016/j.vacuum.2015.05.019 |
| Popis: | The interest in the study of Cadmium oxide (CdO) for photonic applications has increased significantly because of its promising electrical and optical properties. Real solar cells based on an n-CdO/p-Si heterostructures show poor photovoltaic performance, however. In this work numerical simulation is used to elucidate this poor performance by considering two cases. CdO is firstly considered as a perfect crystalline semiconductor. The second case models CdO as a semiconductor with continuous distribution of defects states in its band-gap, similar to an amorphous semiconductor, made of two tail bands (a donor-like and an acceptor-like) and two Gaussian distribution deep level bands (an acceptor-like and a donor-like). Evidently the first case produced results far from reality. In the second case, however, and by adjusting the constituents of the band-gap states the open circuit voltage (VOC) and the short circuit current (JSC) were almost perfectly reproduced but not the fill factor (FF) and the conversion efficiency (η). The p-type doping of Silicon adjustment has lead to a better reproduction of the two latter parameters. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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