Investigation on the convergence of the evanescent model and the polynomial model including effective conducting path effect (ECPE): Applied to the submicronic SG FD SOI MOSFET

Autor:	Abdellah Aouaj, A. Bouziane, A. Nouacry
Rok vydání:	2011
Předmět:	Polynomial and rational function modeling Computer science business.industry Convergence (routing) MOSFET Mathematical analysis Silicon on insulator Electric potential Poisson's equation Telecommunications business Subthreshold slope Threshold voltage
Zdroj:	2011 International Conference on Multimedia Computing and Systems.
DOI:	10.1109/icmcs.2011.5945714
Popis:	We are presenting a convergence study of the evanescent model and the polynomial model with and without the Effective Conduction Path Effect (ECPE). These analytic models of the electric potential in the channel are used to analyze the short channel effects for the submicronic Single Gate FD SOI MOSFET. Hereby, we figure out the 2D Poisson equation and we analytically write the surface potential, the threshold voltage, the DIBL and the sub-threshold slope. The results show a good agreement of the evanescent model and the polynomial model including the ECPE with measures done by simulation tools.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::851ee4fe9993494bf013dfa25be2bc28 https://doi.org/10.1109/icmcs.2011.5945714 Zobrazit plný text záznamu