Stress‐free GaAs grown on Si using a stress balance approach
| Autor: | Gérard Neu, J. C. Grenet, A. Freundlich, G. Stobl |
|---|---|
| Rok vydání: | 1991 |
| Předmět: |
chemistry.chemical_classification
Materials science Photoluminescence Physics and Astronomy (miscellaneous) Silicon business.industry chemistry.chemical_element Mineralogy Crystal growth Thermal expansion Stress (mechanics) chemistry Residual stress Optoelectronics Thin film business Inorganic compound |
| Zdroj: | Applied Physics Letters. 59:3568-3570 |
| ISSN: | 1077-3118 0003-6951 |
| Popis: | A novel technique, based on a stress balance principle, is proposed to control residual stress magnitude in GaAs layers grown on Si substrates. It is demonstrated that, using a suitable GaAs1−xPx buffer layer, room (300 K) or low (2 K) temperature stress‐free GaAs can be grown on Si (100). |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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