Impact of H2S annealing on SnS device performance

Autor: Riley E. Brandt, Rafael Jaramillo, Roy G. Gordon, Leizhi Sun, Helen Hejin Park, Vera Steinmann, Rupak Chakraborty, Tonio Buonassisi, Yun Seog Lee, Katy Hartman
Rok vydání: 2014
Předmět:
Zdroj: 2014 IEEE 40th Photovoltaic Specialist Conference (PVSC).
DOI: 10.1109/pvsc.2014.6924932
Popis: Tin sulfide is regarded as a possible earth-abundant alternative for chalcogenide thin film photovoltaics. The material has strong absorption in the visible wavelength region and the possibility for high carrier mobility. We review recent progress for SnS solar cell efficiencies. Annealing in H 2 S gas and surface passivation of SnS are thought to be two key components that increase efficiency of SnS devices. An efficiency of η = 3.88% [1] was achieved via thermal evaporation, a manufacturing-friendly deposition method.
Databáze: OpenAIRE