Active-Matrix Amorphous-Silicon TFTs Arrays at 180$^circhboxC$on Clear Plastic and Glass Substrates for Organic Light-Emitting Displays
| Autor: | Helena Gleskova, A.Z. Kattamis, I-Chun Cheng, Ke Long, Marie B. O'Regan, Matthew Stevenson, Gang Yu, James C. Sturm, Sigurd Wagner |
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| Rok vydání: | 2006 |
| Předmět: |
Amorphous silicon
Materials science business.industry Oxide thin-film transistor Electronic Optical and Magnetic Materials Active matrix law.invention Amorphous solid Threshold voltage chemistry.chemical_compound chemistry law Thin-film transistor Optoelectronics Electrical and Electronic Engineering Thin film business Light-emitting diode |
| Zdroj: | IEEE Transactions on Electron Devices. 53:1789-1796 |
| ISSN: | 1557-9646 0018-9383 |
| DOI: | 10.1109/ted.2006.878028 |
| Popis: | An amorphous-silicon thin-film transistor (TFT) process with a 180 degC maximum temperature using plasma-enhanced chemical vapor deposition has been developed on both novel clear polymer and glass substrates. The gate leakage current, threshold voltage, mobility, and on/off ratio of the TFTs are comparable with those of standard TFTs on glass with deposition temperature of 300 degC-350 degC. Active-matrix pixel circuits for organic light-emitting displays (LEDs) on both glass and clear plastic substrates were fabricated with these TFTs. Leakage current in the switching TFT is low enough to allow data storage for video graphics array timings. The pixels provide suitable drive current for bright displays at a modest drive voltage. Test active matrices with integrated polymer LEDs on glass showed good pixel uniformity, behaved electrically as expected for the TFT characteristics, and were as bright as 1500 cd/m2 |
| Databáze: | OpenAIRE |
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