Methods for Calculation and Control of the Impurity Difference Dose in Avalanche InGaAs/InP Structures

Autor:	P. E. Khakuashev, I. V. Chinareva, A. K. Budtolaev, N. V. Kravchenko
Rok vydání:	2018
Předmět:	Radiation Materials science Fabrication APDS business.industry Condensed Matter Physics Avalanche photodiode Epitaxy Electronic Optical and Magnetic Materials law.invention Planar law Impurity Optoelectronics Electrical and Electronic Engineering Diffusion (business) business
Zdroj:	Journal of Communications Technology and Electronics. 63:306-308
ISSN:	1555-6557 1064-2269
Popis:	Methods for calculation and control of impurity difference dose Qа during the planar procedure of fabrication of avalanche photodiodes (APDs) based on heteroepitaxial InGaAs/InP structures are presented. The developed methods for the difference dose control in avalanche InGaAs/InP structures have been used at various stages of APD fabrication. It has been demonstrated that a tighter impurity dose control from the manufacturer of epitaxial structures, coordination of dose measurement procedures, and correction of diffusion processes for specific impurity doses are needed.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::84f0291d4cc9ba631231b83b1e6558b6 https://doi.org/10.1134/s106422691803004x Zobrazit plný text záznamu Full text from SpringerLink