Comparison of Polished and Dry Etched Semipolar $(11\bar{2}2)$ III-Nitride Laser Facets
| Autor: | James S. Speck, Robert M. Farrell, Steven P. DenBaars, Shuji Nakamura, Jeremiah J. Weaver, Po Shan Hsu, Kenji Fujito |
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| Rok vydání: | 2013 |
| Předmět: |
Materials science
business.industry Wide-bandgap semiconductor Polishing Substrate (electronics) Nitride Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Optics Etching (microfabrication) Surface roughness Optoelectronics Dry etching Electrical and Electronic Engineering Facet business |
| Zdroj: | IEEE Photonics Technology Letters. 25:2105-2107 |
| ISSN: | 1941-0174 1041-1135 |
| Popis: | We compare facet morphology, device characteristics, and far field patterns (FFPs) for semipolar (1122) laser diodes fabricated with mechanically polished and dry etched mirror facets. Facets formed by Cl2-based dry etching produced inclined and heavily striated facets. Mechanically polished facets, in contrast, provided vertical and smooth facets (rms roughness=5.2 nm). The threshold currents of polished facet devices were on average ~ 100 and ~ 200 mA lower than etched facet devices (2 × 1200 μm2 and 4 × 1200 μm2 dimension devices, respectively). FFPs from etched facets were also shown to be obscured due to substrate reflections. |
| Databáze: | OpenAIRE |
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