| Autor: |
Raymond Quéré, J.P. Villotte, J.M. Collantes, G. Montoriol, J.J. Raoux, F. Dupis |
| Rok vydání: |
2002 |
| Předmět: |
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| Zdroj: |
Proceedings of 1995 IEEE MTT-S International Microwave Symposium. |
| DOI: |
10.1109/mwsym.1995.406271 |
| Popis: |
A large-signal model for RF power MOSFET has been obtained using a new characterization and extraction technique. This technique is based on pulsed I-V characteristics and pulsed S-parameters measurements, to take into account the thermal state of the device. A table-based model is used to represent the I-V drain current source. The complete large-signal model is implanted in an harmonic-balance commercial simulator and its accuracy is evidenced by a comparison with active load-pull measurements at L band. > |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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