| Autor: |
R. G. Filippi, B. Redder, Paul S. McLaughlin, Ping-Chuan Wang, J. Poulin, A. Brendler, James R. Lloyd, James J. Demarest |
| Rok vydání: |
2009 |
| Předmět: |
|
| Zdroj: |
2009 IEEE International Reliability Physics Symposium. |
| ISSN: |
1541-7026 |
| DOI: |
10.1109/irps.2009.5173295 |
| Popis: |
Electromigration results are described for a Dual Damascene structure with copper metallization and a low-k dielectric material. The failure times follow a bimodal lognormal behavior with early and late failures. Moreover, there is evidence of a threshold failure time such that each failure mode is represented by a 3-parameter lognormal distribution. It is found that the threshold failure time scales differently with current density from the median time to failure, which can be explained by considering two components of the electromigration lifetime: one controlled by void nucleation and the other controlled by void growth. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
|
