Impact of carbon concentration on the interface density of states of metal-oxide Si1−x−y GexCy (strained) capacitors
| Autor: | B. Garrido, A. Cuadras, Luis Fonseca, T. Grabolla, K. Pressel, Bernd Tillack, Joan Ramon Morante |
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| Rok vydání: | 2004 |
| Předmět: |
Solid-state physics
Condensed matter physics Chemistry business.industry Band gap Oxide Mineralogy Condensed Matter Physics Electronic Optical and Magnetic Materials law.invention Stress (mechanics) Metal chemistry.chemical_compound Capacitor Semiconductor law visual_art Materials Chemistry visual_art.visual_art_medium Density of states Electrical and Electronic Engineering business |
| Zdroj: | Journal of Electronic Materials. 33:1022-1027 |
| ISSN: | 1543-186X 0361-5235 |
| DOI: | 10.1007/s11664-004-0030-0 |
| Popis: | We describe and model the electrical response of interface states of metal-oxide semiconductor (MOS) capacitors fabricated from Si1−x−yGexCy strained layers as a function of C concentration. We find that the introduction of Ge and C in the epilayers leads to anomalies in the capacitance-voltage curves in the form of kinks or plateaus. This behavior is explained by the presence of pronounced peaks on the density of interface states in the bandgap. Our results suggest an adequate Ge/C ratio of 40 minimizes the density of interface states. This ratio is different from the ratio of ∼10 required for stress compensation. Finally, we discuss the implications for the introduction of Si1−x−yGexCy strained layers to fabricate MOS devices. |
| Databáze: | OpenAIRE |
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