A Novel High Latch-Up Immunity Electrostatic Discharge Protection Device for Power Rail in High-Voltage ICs
| Autor: | Siyang Liu, Feng Lin, Chunwei Zhang, Kaikai Xu, Jiaxing Wei, Wei Su, Ran Ye, Shulang Ma, Guipeng Sun, Weifeng Sun, Aijun Zhang |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Engineering Zener effect business.industry 020208 electrical & electronic engineering Bipolar junction transistor Electrical engineering High voltage 02 engineering and technology 01 natural sciences Transient voltage suppressor Electronic Optical and Magnetic Materials 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Zener diode Electrical and Electronic Engineering Safety Risk Reliability and Quality business Current density Common emitter Diode |
| Zdroj: | IEEE Transactions on Device and Materials Reliability. 16:266-268 |
| ISSN: | 1558-2574 1530-4388 |
| DOI: | 10.1109/tdmr.2016.2544350 |
| Popis: | In this letter, a novel high latch-up immunity electrostatic discharge protection device that can be equivalent to a PNP-type bipolar junction transistor (BJT) and a series-connected Zener diode is proposed. For the proposed device, the emitter of its BJT is formed by Zener implantation instead of conventional P-plus. In this way, the high latch-up immunity can be achieved by the Zener implantation dose and window designing. Meanwhile, the proposed device exhibits excellent voltage clamp capability and 2.2 times large second breakdown current as a generally used diode. |
| Databáze: | OpenAIRE |
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