Investigation of substoichiometric titanium nitride grown by unbalanced magnetron sputtering
| Autor: | S Yang, D.B. Lewis, Wolf-Dieter Münz, I. Wadsworth, J.S. Brooks, J. Cawley |
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| Rok vydání: | 2000 |
| Předmět: |
Materials science
Metallurgy Analytical chemistry Surfaces and Interfaces General Chemistry Substrate (electronics) Sputter deposition Condensed Matter Physics Microstructure Titanium nitride Surfaces Coatings and Films chemistry.chemical_compound chemistry Sputtering Phase (matter) Physical vapor deposition Materials Chemistry Thin film |
| Zdroj: | Surface and Coatings Technology. 131:228-233 |
| ISSN: | 0257-8972 |
| Popis: | TiN x (stoichiometric factor, x =0.1–0.4) films were deposited at a substrate temperature typically of 480°C using an industrial-sized multi-target PVD coating machine. The stoichiometric factor, x , depended on the manner of substrate rotation as well as the reactive gas flow during depositing. In parallel, multiphase compositions of αTi(N), eTi 2 N and δTiN were found with hardness values varying from 1500 to 2300 Hk, and 2100 Hk for e phase Ti 2 N. The XRD spectral showed Bragg reflections associated with mixed phase compositions. The almost pure eTi 2 N phase was found in the film with x close to 0.34 and the XRD diffraction pattern of this film perfectly matched the e phase documented as referred to in the JCPDS file 17-386. SEM and TEM cross-sections exhibited a very fine grain structure for films containing dominant eTi 2 N phase. The microstructure of eTi 2 N film was extremely homogeneous throughout the complete film growth. The surface of eTi 2 N film was surprisingly smooth. |
| Databáze: | OpenAIRE |
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