The Dielectric Properties of PLZT Thin Films as Post Annealing Temperatures of TiO2Buffer Layer
| Autor: | Young-Guk Son, Sang-Jih Kim, Ji-Eon Yoon, In-Seok Lee |
|---|---|
| Rok vydání: | 2008 |
| Předmět: |
Materials science
Materials Science (miscellaneous) chemistry.chemical_element Dielectric Sputter deposition Condensed Matter Physics Ferroelectricity Buffer (optical fiber) chemistry Electrode Electronic engineering Electrical and Electronic Engineering Physical and Theoretical Chemistry Thin film Composite material Platinum Layer (electronics) |
| Zdroj: | Journal of the Korean Vacuum Society. 17:560-565 |
| ISSN: | 1225-8822 |
| DOI: | 10.5757/jkvs.2008.17.6.560 |
| Popis: | (PLZT) thin films with buffer layers were deposited on Pt/Ti//Si substrates by an R.F. magnetron sputtering method in order to improve the ferroelectric characteristics of the films. And the ferroelectric properties and crystallinities of the PLZT thin films were investigated in terms of the effects of the post annealing temperatures of buffer layers between a platinum bottom electrode and PLZT thin film. The ferroelectric properties of the PLZT thin films improved as increasing of the post annealing temperatures of layers, thereby reaching their maximum at . |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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