Correlation between defect-related photoluminescence emission and anomalous Raman peaks in N-Al co-doped ZnO thin films
| Autor: | Chih Yu Chen, T. C. Han, Chin Chung Yu, Y. M. Hu, Nai Yun Chen, Jung Yu Li |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Materials science Photoluminescence Physics and Astronomy (miscellaneous) Annealing (metallurgy) Binding energy Analytical chemistry 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Crystallinity symbols.namesake X-ray photoelectron spectroscopy 0103 physical sciences symbols Thin film 0210 nano-technology Raman spectroscopy Raman scattering |
| Zdroj: | Applied Physics Letters. 110:141903 |
| ISSN: | 1077-3118 0003-6951 |
| DOI: | 10.1063/1.4979597 |
| Popis: | The origins of defect-related photoluminescence (PL) and anomalous Raman peaks in N-doped ZnO are poorly understood. These features may be related to defects that control p-type conduction in N-doped and N-Al co-doped ZnO (AZO) films. In this study, we investigate the effects of introducing N2 gas during film deposition or a post-growth annealing process on crystallinity and defects in AZO films. A clear correlation between interstitial Zn (Zni)-related PL emissions and Raman features is found. X-ray diffraction and Hall results revealed that N was incorporated into AZO films deposited in the presence of N2 (N-doped AZO), whereas films annealed in N2 gas (N2-annealed AZO) had improved crystallinity with no substitution of N2 at O sites [(N2)O] or N at O sites (NO). The Raman scattering and PL spectra results indicated that Zni-related vibration and emission were dominant in the N-doped AZO films. X-ray photoelectron spectroscopy showed increases and decreases in the binding energies of Zn 2p and O 1s stat... |
| Databáze: | OpenAIRE |
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