A Si-bipolar technology for optical fiber transmission rates above 10 Gb/s
| Autor: | H.-U. Schreiber, J.N. Albers |
|---|---|
| Rok vydání: | 1991 |
| Předmět: |
Optical fiber
Silicon Computer Networks and Communications Computer science business.industry Bipolar junction transistor chemistry.chemical_element Hardware_PERFORMANCEANDRELIABILITY Transmission system Multiplexing Multiplexer Capacitance law.invention chemistry law Hardware_INTEGRATEDCIRCUITS Optoelectronics Electrical and Electronic Engineering Photolithography business Telecommunications Lithography Hardware_LOGICDESIGN Electronic circuit |
| Zdroj: | IEEE Journal on Selected Areas in Communications. 9:652-655 |
| ISSN: | 0733-8716 |
| DOI: | 10.1109/49.87632 |
| Popis: | A multiplexer operating at up to 12 Gb/s has been demonstrated using a simple, but optimized, silicon bipolar technology with 2 mu m lithography. Using this simple but optimized technology, a 12 Gb/s multiplexer was implemented. Circuit simulations predict the increase of the bit rate up to at least 15 Gb/s by changing to the 1.5 mu m lithography. The results of experimental investigations and circuit simulations show that low-cost silicon-based bipolar circuits will be available for future optical-fiber transmission systems with data rates higher than 10 Gb/s. > |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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