Local structure and magnetic properties of ferromagnetic GaMnAs made by helium ion induced epitaxial crystallization annealing
| Autor: | C. P. Lee, Cheng-Chung Chi, R.T. Huang, D.C. Yan, H. Niu, Chien-Hsu Chen, H.H. Hsieh |
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| Rok vydání: | 2014 |
| Předmět: |
Materials science
Condensed matter physics Ion beam Magnetic moment Magnetic circular dichroism General Physics and Astronomy Surfaces and Interfaces General Chemistry Magnetic semiconductor Condensed Matter Physics Surfaces Coatings and Films law.invention Condensed Matter::Materials Science Ion implantation Ferromagnetism Transmission electron microscopy law Crystallization |
| Zdroj: | Applied Surface Science. 310:210-213 |
| ISSN: | 0169-4332 |
| DOI: | 10.1016/j.apsusc.2014.03.162 |
| Popis: | In this study we show GaMnAs preparation by Mn implantation in GaAs followed by helium ion beam induced epitaxial crystallization annealing. The characteristics of the Mn-implanted layer were investigated by X-ray diffraction, and transmission electron microscopy. The magnetic nature of the Mn-implanted layer was investigated with a superconducting quantum interference device. Structure analysis showed that Mn ions were incorporated substitutionally into the GaAs lattice without the formation of any detectable secondary phases. The remanent magnetic moment exhibited room temperature ferromagnetism. Additional measurement using X-ray magnetic circular dichroism also revealed that the carriers were spin polarized. |
| Databáze: | OpenAIRE |
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