Rearrangement of the optical properties of a-SiOx: H films after crystallization of silicon nanoclusters
| Autor: | Igor E. Zanin, E. I. Terukov, D. A. Minakov, O. V. Serbin, Yu. K. Undalov, V. A. Terekhov, Dmitry Goloshchapov, Pavel Seredin, E.V. Popova, Irina N. Trapeznikova, K. A. Barkov |
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| Rok vydání: | 2021 |
| Předmět: |
Coalescence (physics)
Materials science Silicon Annealing (metallurgy) business.industry chemistry.chemical_element Condensed Matter Physics Electronic Optical and Magnetic Materials law.invention Nanoclusters chemistry Nanocrystal Chemical engineering law Materials Chemistry Ceramics and Composites Crystallite Crystallization Photonics business |
| Zdroj: | Journal of Non-Crystalline Solids. 571:121053 |
| ISSN: | 0022-3093 |
| DOI: | 10.1016/j.jnoncrysol.2021.121053 |
| Popis: | The results of investigations on crystallization of silicon nanoclusters in a-SiOx matrix have shown that, even at the very fast annealing using pulse photonic annealing (PPA) formation of rather large silicon crystallites (≥ 100 nm) occurs, as well as the arrays of Si nanocrystals with average sizes of ~10 nm and small sizes of ~1–2 nm happens. It is shown that with an increase in the concentration of nanoclusters in the initial film from 15 to 53%, the contribution of large crystals (larger than 100 nm) increases from 15% (at 15% ncl-Si) to 65% (at 53% ncl-Si), which says on an increase in the probability of coalescence of crystallites into substantially larger ones with an increase of ncl-Si content in the initial film, despite the high annealing speed. |
| Databáze: | OpenAIRE |
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