Influence of Argon Plasma Treatment at i/p- Interfaces in Silicon Thin-Film n-i-p Solar Cells
| Autor: | Neumueller, A., Geißendörfer, S., Kirstein, U., Sergeev, O., Vehse, M., Agert, C. |
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| Jazyk: | angličtina |
| Rok vydání: | 2015 |
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| DOI: | 10.4229/eupvsec20152015-3cv.1.11 |
| Popis: | 31st European Photovoltaic Solar Energy Conference and Exhibition; 1165-1167 In silicon thin-film solar cells the p-doped layer is a crucial layer for parasitic absorption and the electrical behavior of the whole cell stack. To obtain high cell performances, it is important to optimize the electrical and optical properties of this layer. In this work we present recent investigations of an argon plasma treatment (APT) at the i/p-interface in high efficient thin-film solar cells on flexible aluminium substrates in n-i-p configuration with hydrogenated amorphous silicon (a-Si:H) absorber. Our experimental investigations show the application of APT on i-layer surfaces which improves the electrical properties of i/p-interface and of the subsequently deposited p-layers. The APT results in both a slightly higher short current density and fill factor while the open-circuit voltage remains constant. Using the APT we developed amorphous silicon solar cells on flexible aluminium substrates with light conversion efficiency up to 7.5%. Based on these results micromorph tandem solar cells are developed on flexible substrates with initial conversion efficiencies up to 11%. |
| Databáze: | OpenAIRE |
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