Cuprous oxide thin films obtained by dip-coating method using rapid thermal annealing treatments
| Autor: | Gerardo Torres-Delgado, O. Zelaya Ángel, Rebeca Castanedo-Pérez, G. Martínez-Saucedo, Arturo Mendoza-Galván |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Diffraction Semiconductor thin films Materials science Mechanical Engineering Metallurgy Analytical chemistry Oxide chemistry.chemical_element 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Dip-coating Copper chemistry.chemical_compound chemistry Mechanics of Materials 0103 physical sciences General Materials Science Crystallite Thin film Rapid thermal annealing 0210 nano-technology |
| Zdroj: | Materials Science in Semiconductor Processing. 68:133-139 |
| ISSN: | 1369-8001 |
| Popis: | The transformation of cupric oxide (CuO) into cuprous oxide (Cu2O) thin films by rapid thermal annealing (RTA) treatments is studied. The CuO films were obtained by dip-coating from a precursor solution containing copper (II) acetate. The films are formed of ten coats, where each one was deposited with a withdrawal speed of 8 cm/min and dried in air at 250 °C for 5 min; after that, the films were sintered in air at 250 °C for 1 h. Under these conditions an average thickness of 240 nm is obtained. The RTA treatments on the CuO films were performed for 10 s with a heating ramp of 5 °C/s in vacuum at temperatures (TA) in the 325–450 °C range with steps of 25 °C. As revealed by X-ray diffraction data, the composition of the polycrystalline films depends upon the applied TA: i) CuO+Cu2O for TA |
| Databáze: | OpenAIRE |
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