Optical investigation of stacking faults in 4H–SiC epitaxial layers: Comparison of 3C and 8H polytypes
| Autor: | Teddy Robert, Sandrine Juillaguet, Jean Camassel |
|---|---|
| Rok vydání: | 2009 |
| Předmět: |
Coupling
Materials science Photoluminescence Field (physics) Condensed matter physics Mechanical Engineering Stacking Electronic structure Condensed Matter Physics Polarization (waves) Crystallography chemistry.chemical_compound chemistry Mechanics of Materials Silicon carbide General Materials Science Quantum well |
| Zdroj: | Materials Science and Engineering: B. 165:5-8 |
| ISSN: | 0921-5107 |
| DOI: | 10.1016/j.mseb.2008.11.004 |
| Popis: | We present an analysis of the electronic structure of in-grown 3C and 8H stacking faults (SFs) in a 4H–SiC matrix. First, the concept of low-temperature photoluminescence optical signature of SFs is discussed. Then, the results of type-II quantum well (QW) model calculations are displayed, taking into account the effect of the valence band offset, internal polarization field and non-homogeneity of the potential well. In this case, we show that a satisfactory description of 3C QWs signature can be reached. The situation is entirely different for 8H. Since a 8H-unit cell is nothing but two 3C lamellae coupled by an hexagonal turn, we investigate in detail the effect of coupling more and more two 3C lamellae until a final 8H QW is found. In this way, we show that a reasonable agreement with experimental data can be reached. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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