| Popis: |
The photoactive and development parameters of commercially available g‐line photoresists which are TOKs OFPR800, OFPR5000, TSMR8900, and TSMR‐V3, were measured. From the simulated and experimental linewidth linearity data, it was found that the photoactive parameters have very little effect on the resolution power (linearity limit) of photoresists, while the development parameters (dissolution rate characteristics) greatly affect the resolution power. New indices, which can properly characterize the resolution power of photoresists, were extracted from the dissolution rate characteristics curves. One is Cd, which is the contrast of the dissolution rate and the other is Rd, which is the range of the dissolution rate. These indices are closely related to the resist resolution power. A larger Cd or Rd gives a higher resolution power to the photoresist. The necessary value of Cd⋅Rd for the 0.5‐μm feature size photolithography process was derived from experimental data under the present highest NA(=0.55) g‐lin... |
