Fabrication of graphene on atomically flat diamond (111) surfaces using nickel as a catalyst
| Autor: | Daisuke Takeuchi, Takao Inokuma, Tsubasa Matsumoto, Masahiko Ogura, Satoshi Yamasaki, Norio Tokuda, Shinya Ito, Shohei Kanada, Masatsugu Nagai |
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| Rok vydání: | 2017 |
| Předmět: |
Materials science
Annealing (metallurgy) Material properties of diamond Nanotechnology 02 engineering and technology engineering.material 01 natural sciences law.invention symbols.namesake law 0103 physical sciences Monolayer Materials Chemistry Electrical and Electronic Engineering Composite material 010306 general physics Graphene Mechanical Engineering Diamond General Chemistry 021001 nanoscience & nanotechnology Electronic Optical and Magnetic Materials engineering symbols 0210 nano-technology Raman spectroscopy Bilayer graphene Graphene nanoribbons |
| Zdroj: | Diamond and Related Materials. 75:105-109 |
| ISSN: | 0925-9635 |
| DOI: | 10.1016/j.diamond.2017.02.014 |
| Popis: | We fabricated graphene on atomically flat diamond (111) surfaces via annealing with nickel as a catalyst. The annealing was conducted at 900 °C for 1 min under Ar atmosphere. Using Raman spectroscopy, the formed graphene was characterized as multilayer with some monolayer coverage. After the graphene layers were removed, the diamond (111) surfaces exhibited step-terrace structures with a root-mean-square roughness of 0.05 nm in the terrace region. The step height was ~ 0.21 nm, which agreed well with a single bi-atomic layer of (111) diamond. These results indicate that the graphene layers were formed on atomically flat diamond (111) surfaces with step-terrace structures. The graphene layers showed P-type conduction with sheet carrier concentration and mobility values of 5.7 × 10 13 cm − 2 and 140 cm 2 /Vs, respectively. These electrical properties are equivalent to the band structure properties predicted by density functional theory calculations. |
| Databáze: | OpenAIRE |
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