Characteristics of InAs/AlSb high electron mobility transistors grown on Si using a GaAsSb step-graded buffer layer
| Autor: | Jen-Inn Chyi, Nien Tze Yeh, Clement Hsingjen Wann, Wei Jen Hsueh, Pei Chin Chiu, Chao Ching Cheng, Chih-Hsin Ko, You Ru Lin |
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| Rok vydání: | 2013 |
| Předmět: |
Electron mobility
Materials science business.industry Process Chemistry and Technology Transistor Stacking High-electron-mobility transistor Buffer (optical fiber) Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention law Transmission electron microscopy Materials Chemistry Optoelectronics Electrical and Electronic Engineering business Instrumentation Layer (electronics) Molecular beam epitaxy |
| Zdroj: | Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 31:061207 |
| ISSN: | 2166-2754 2166-2746 |
| Popis: | A GaAsSb step-graded metamorphic buffer layer is used for growing InAs/AlSb high electron mobility transistor structures on Si substrate by molecular beam epitaxy. The step-graded metamorphic buffer layer effectively reduces the number of microtwins and stacking faults penetrating to the InAs channel as evidenced by transmission electron microscopy. By reducing the planar defects with the metamorphic buffer layer, a significant improvement on electron mobility up to 18 100 cm2/V s and 39 700 cm2/V s at room temperature and 77 K, respectively, is achieved. |
| Databáze: | OpenAIRE |
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