Extremely low specific contact resistivities for p-type GaSb, grown by molecular beam epitaxy
Autor: | Jeffrey A. Mittereder, Bijan Tadayon, Saied Tadayon, Mohammad Fatemi, Carl S. Kyono |
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Rok vydání: | 1995 |
Předmět: | |
Zdroj: | Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 13:1 |
ISSN: | 0734-211X |
DOI: | 10.1116/1.587979 |
Popis: | We have investigated different metal contacts (Cr/Au, Ti/Pt/Au, and Au) on p‐type GaSb, grown by the molecular beam epitaxy. For Au contacts, specific contact resistivities in the range of 1.4×10−8–7.8×10−8 Ω cm2 have been obtained. These are the lowest values ever reported for p‐type GaSb. A simple procedure for surface preparation is also reported. |
Databáze: | OpenAIRE |
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