Extremely low specific contact resistivities for p-type GaSb, grown by molecular beam epitaxy

Autor: Jeffrey A. Mittereder, Bijan Tadayon, Saied Tadayon, Mohammad Fatemi, Carl S. Kyono
Rok vydání: 1995
Předmět:
Zdroj: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 13:1
ISSN: 0734-211X
DOI: 10.1116/1.587979
Popis: We have investigated different metal contacts (Cr/Au, Ti/Pt/Au, and Au) on p‐type GaSb, grown by the molecular beam epitaxy. For Au contacts, specific contact resistivities in the range of 1.4×10−8–7.8×10−8 Ω cm2 have been obtained. These are the lowest values ever reported for p‐type GaSb. A simple procedure for surface preparation is also reported.
Databáze: OpenAIRE