Annealing effect on threading dislocations in a GaN grown on Si substrate
| Autor: | Hiroyuki Iwata, M. Irie, H. Kobayashi, Yoshio Honda, R. Kamei, Hiroshi Amano, T. Kamiya, H. Saka, Nobuhiko Sawaki |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Photoluminescence Materials science Condensed matter physics Annealing (metallurgy) chemistry.chemical_element 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Crystallographic defect Inorganic Chemistry Crystallography chemistry Si substrate Transmission electron microscopy Vacancy defect 0103 physical sciences Materials Chemistry Gallium Dislocation 0210 nano-technology |
| Zdroj: | Journal of Crystal Growth. 468:835-838 |
| ISSN: | 0022-0248 |
| DOI: | 10.1016/j.jcrysgro.2017.01.001 |
| Popis: | Effect of rapid thermal annealing (RTA) on crystal defects in a GaN layer grown on a (111)Si substrate was investigated by photoluminescence (PL) and transmission electron microscopy (TEM) analyses. The PL spectra suggested that the density of gallium vacancy is not changed by the heat treatment up to 700 °C. In the TEM specimen, we had dislocation half loops generated by off-axis propagation of the threading dislocation. We found that the half-loop of c-type dislocation shrinks/moves by a repetitive RTA at 600–700 °C. In contrast, we could find no remarkable changes in the a-type or a+c-type dislocations. |
| Databáze: | OpenAIRE |
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