High-Sensitivity Photodetector Based on Atomically Thin MoS2
| Autor: | A. P. Shestakova, Elena Mishina, Yu. R. Efimenkov, S. D. Lavrov, A. S. Sigov |
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| Rok vydání: | 2018 |
| Předmět: |
Materials science
Fabrication business.industry Process (computing) Photodetector 02 engineering and technology 010402 general chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Atomic and Molecular Physics and Optics 0104 chemical sciences Electronic Optical and Magnetic Materials Characterization (materials science) Quality (physics) Photosensitivity Optoelectronics 0210 nano-technology business Sensitivity (electronics) Voltage |
| Zdroj: | Semiconductors. 52:771-775 |
| ISSN: | 1090-6479 1063-7826 |
| DOI: | 10.1134/s106378261806012x |
| Popis: | A design for a high-sensitivity photodetector with a single layer of MoS2 transition-metal dichalcogenide used as the basic functional element is proposed and the process of its fabrication is presented step by step. Quality evaluation and the selection of functional MoS2 flakes is based on the results of combined optical characterization. The main operating characteristics of the fabricated device are investigated and a photosensitivity of 1.4 mA/W is demonstrated. A difference of this device in comparison with existing analogues is its high photosensitivity at low operating voltages (in the range of ±3 V). |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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