Autor:	M. Bujatti
Rok vydání:	2006
Předmět:	chemistry.chemical_compound Materials science chemistry business.industry Schottky diode Optoelectronics MESFET business Gallium arsenide
Zdroj:	13th European Microwave Conference, 1983.
DOI:	10.1109/euma.1983.333212
Popis:	The most recent developments in GaAs MESFET's are reviewed and compared to the progress of other fast three-terminal devices potentially of interest for mm-wave applications. An attempt is made at predicting future performance by extrapolating the present trends.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::845ec128bdcc13b8b1758be82fa2c23a https://doi.org/10.1109/euma.1983.333212 Zobrazit plný text záznamu