Influence of silicon processing in atomic hydrogen on the formation of local molten regions as a result of pulsed irradiation with optical photons

Autor:	Ya. V. Fattakhov, D.I. Proskurovsky, Il'dus B. Khaibullin, T. N. L’vova, Sergii Romanenko, V. A. Kagadei, E. V. Nefedtsev, M. V. Zakharov, K. V. Oskomov
Rok vydání:	2006
Předmět:	Hydrogen flux Materials science Photon Hydrogen Silicon chemistry.chemical_element Condensed Matter Physics Crystallographic defect Molecular physics Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Crystallography chemistry Irradiation Surface layer
Zdroj:	Semiconductors. 40:59-63
ISSN:	1090-6479 1063-7826
Popis:	The effect of intense atomic hydrogen flux on the defect density in the surface layer of single-crystal silicon is studied. It is shown that the formation of local molten regions by pulsed-light heating of Si samples and further analysis of the local melting pattern can be an efficient tool for determining the number of defects introduced by the processing in atomic hydrogen. It was found that the processing conditions in atomic hydrogen with an exposure dose lower than 2.7 × 1017 cm−2 do not change the number of defects in Si; in contrast, conditions with an exposure dose above 3.6 × 1018 cm−2 significantly increase the defect density. The increase in the number of defects can be caused by the interaction of atomic hydrogen with the Si surface.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::845d13dd91de1e326838222fe1a6687b https://doi.org/10.1134/s1063782606010106 Zobrazit plný text záznamu Plný text ve formátu PDF